Peking University Team Breaks the Limit of Ferroelectric Transistors: 1 nm Gate Length Device Developed

On February 14th, the research team led by Qiu Chenguang, a researcher at the School of Electronics at Peking University, announced the successful fabrication of the smallest (with a physical gate length of 1 nanometer) and lowest-power ferroelectric transistor to date. The relevant findings were published online in Science Advances. This breakthrough was achieved jointly by Researcher Qiu Chenguang's team and Professor Peng Lianmao's team. Through innovative nano-gate structural design, the team skillfully addressed the shortcomings of traditional ferroelectric transistors, such as high energy consumption and mismatched logic voltage, reducing the device's energy consumption by an order of magnitude compared to the best international levels.